An Ultra-Wideband and Low-Power Amplifier Using 0.35-μm SiGe BiCMOS Technology

We propose a unique wideband amplifier configuration. The new configuration adopts an improved Darlington amplifier to broaden the bandwidth and flatten the output gain. The low power consumption and matched impedances are also achieved in our amplifier. This circuit has been realized using Toshiba 0.35 mum SiGe BiCMOS technology with the fT of 30 GHz. The simulation result of the presented amplifier demonstrates 1-10 GHz bandwidth and 11.3-dB maximum forward gain (S21) with less than plusmn0.5-dB gain flatness while it drains 8 mA from a 3-V supply. A 1-dB compression point and an IIP3 of -12.5 dBm and 6 dBm respectively also have been reported in this paper.