• DocumentCode
    3274454
  • Title

    Deep Reactive Ion Etching based silicon micromachined components at terahertz frequencies for space applications

  • Author

    Chattopadhyay, Goutam ; Ward, John S. ; Manohara, Harish ; Toda, Risaku

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Jet Propulsion Laboratory (JPL) is using deep reactive ion etching (DRIE) based silicon micromachining capabilities to develop the critical waveguide components at submillimeter wavelengths that will lead to highly integrated multi-pixel spectrometers, imagers, and radars. In this paper we describe the design and fabrication of silicon micromachined critical waveguide components operating in the 325-500 GHz frequency band for space applications. We also address the challenges of testing these devices when interfaced with metal waveguide test fixtures.
  • Keywords
    astronomical instruments; elemental semiconductors; micromachining; silicon; sputter etching; submillimetre wave devices; waveguides; Si; critical waveguide components; deep reactive ion etching; frequency 325 GHz to 500 GHz; imagers; integrated multipixel spectrometers; metal waveguide test fixtures; radars; silicon micromachining; space applications; Airborne radar; Etching; Frequency; Laboratories; Micromachining; Propulsion; Silicon; Spectroscopy; Testing; Waveguide components;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665514
  • Filename
    4665514