DocumentCode
3274454
Title
Deep Reactive Ion Etching based silicon micromachined components at terahertz frequencies for space applications
Author
Chattopadhyay, Goutam ; Ward, John S. ; Manohara, Harish ; Toda, Risaku
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
2
Abstract
Jet Propulsion Laboratory (JPL) is using deep reactive ion etching (DRIE) based silicon micromachining capabilities to develop the critical waveguide components at submillimeter wavelengths that will lead to highly integrated multi-pixel spectrometers, imagers, and radars. In this paper we describe the design and fabrication of silicon micromachined critical waveguide components operating in the 325-500 GHz frequency band for space applications. We also address the challenges of testing these devices when interfaced with metal waveguide test fixtures.
Keywords
astronomical instruments; elemental semiconductors; micromachining; silicon; sputter etching; submillimetre wave devices; waveguides; Si; critical waveguide components; deep reactive ion etching; frequency 325 GHz to 500 GHz; imagers; integrated multipixel spectrometers; metal waveguide test fixtures; radars; silicon micromachining; space applications; Airborne radar; Etching; Frequency; Laboratories; Micromachining; Propulsion; Silicon; Spectroscopy; Testing; Waveguide components;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665514
Filename
4665514
Link To Document