Title :
The higher order temperature compensation of bandgap voltage references
Author :
Salminen, O. ; Halonen, K.
Author_Institution :
Helsinki Univ. of Technol., Espoo, Finland
Abstract :
A novel method for the curvature correction of bandgap references is introduced. Two well-known circuit topologies with no additional compensation are briefly analyzed. The causes of strong higher-order nonlinearities are presented. The square-law ID-VDS characteristics of the MOS-transistor are used for compensating the nonlinear temperature dependence of the reference output voltage. The temperature behavior of the MOS-transistor is analyzed in detail. The effect of process variations for both temperature stability and PSR is also discussed
Keywords :
CMOS integrated circuits; compensation; network topology; reference circuits; CMOS process; MOS-transistor; PSR; bandgap voltage references; circuit topologies; curvature correction; higher order temperature compensation; nonlinear temperature dependence; square law I-V characteristics; temperature stability; Bipolar transistors; CMOS process; Circuit topology; Diodes; Photonic band gap; Resistors; Stability; Temperature dependence; Temperature distribution; Threshold voltage;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.230244
