The higher order temperature compensation of bandgap voltage references

Author

Salminen, O. ; Halonen, K.

Author_Institution

Helsinki Univ. of Technol., Espoo, Finland

Volume

3

fYear

1992

fDate

10-13 May 1992

Firstpage

1388

Abstract

A novel method for the curvature correction of bandgap references is introduced. Two well-known circuit topologies with no additional compensation are briefly analyzed. The causes of strong higher-order nonlinearities are presented. The square-law I_D-V_DS characteristics of the MOS-transistor are used for compensating the nonlinear temperature dependence of the reference output voltage. The temperature behavior of the MOS-transistor is analyzed in detail. The effect of process variations for both temperature stability and PSR is also discussed

Keywords

CMOS integrated circuits; compensation; network topology; reference circuits; CMOS process; MOS-transistor; PSR; bandgap voltage references; circuit topologies; curvature correction; higher order temperature compensation; nonlinear temperature dependence; square law I-V characteristics; temperature stability; Bipolar transistors; CMOS process; Circuit topology; Diodes; Photonic band gap; Resistors; Stability; Temperature dependence; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.230244

Filename

230244