Title :
Heterostructure equivalence of step-recovery diodes for ballistic and diffusive electron resonance - a new concept for THz signal generation
Author :
Hartnagel, H.L. ; Schmidt, L.P. ; Nicolae, B. ; Oprea, I. ; Schönherr, D. ; Ong, D.S. ; Schür, J. ; Ruf, M.
Author_Institution :
Tech. Univ. Darmstadt, Darmstadt
Abstract :
A heterostructure equivalent to the well-known step recovery diode principle, arranged as a double structure gives a new nonlinear device for highly efficient harmonic THz signal generation. Like in the case of step recovery diodes, these devices exhibit promising performance especially for the generation of higher order harmonics. Theoretical and experimental results will be presented.
Keywords :
III-V semiconductors; aluminium compounds; ballistic transport; charge storage diodes; gallium arsenide; p-n heterojunctions; terahertz wave generation; AlGaAs-GaAs-AlGaAs; AlGaAs/GaAs/AlGaAs heterojunctions; ballistic electron resonance; diffusive electron resonance; heterostructure equivalent; nonlinear device; pn-junctions; step recovery diodes; terahertz signal generation; Electrons; Heterojunctions; Indium compounds; Indium gallium arsenide; P-i-n diodes; Reflection; Resonance; Semiconductor diodes; Signal generators; Voltage;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665549
