MD-ISE-FE multi-scale modeling of interface structure in microelectronic devices

With the rapid development of microelectronic technology, thermal behavior of interface structure has become one of the priorities in microelectronic reliability research. Multi-scale coupled analysis has gradually become the main analysis method of the interface heat transferring problem. The coupled method and key modeling technology among MD (Molecular Dynamics), ISE (Interface Stress Element) and FE (Finite Element) have been introduced in this paper. ISE has been used in the MD-FE multi-scale model to analyze the heat transferring problem of microelectronic devices interface structure according to the interpolation precision of handshake region of the MD-FE model. Preliminary results have been calculated by the MD-ISE-FE multi-scale model. It indicated that the analysis from micro to macro by using MDISEFE coupling method was feasible.