• DocumentCode
    3275352
  • Title

    Broadband antireflective structures for the THz spectral range fabricated on high resistive float zone silicon

  • Author

    Brückner, Claudia ; Käsebier, Thomas ; Pradarutti, Boris ; Riehemann, Stefan ; Notni, Gunther ; Kley, Ernst-Bernhard ; Tünnermann, Andreas

  • Author_Institution
    Fraunhofer Inst. for Appl. Opt. & Precision Eng., Jena
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Antireflective structures for a spectral range from 0.1-1.2 THz are applied to the surface of high resistive float zone silicon by deep reactive ion etching. Binary hexagonal and rectangular structures yield an increase in the pulse maximum of the electric field strength of about 20 percent for one structured surface.
  • Keywords
    antireflection coatings; elemental semiconductors; silicon; sputter etching; surface structure; terahertz wave spectra; Si; THz spectra; broadband antireflective structures; deep reactive ion etching; electric field strength; frequency 0.1 THz to 1.2 THz; high resistive float zone silicon; Diffraction gratings; Etching; Frequency; Manufacturing; Optical surface waves; Polarization; Refractive index; Silicon; Time measurement; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665564
  • Filename
    4665564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3275352