DocumentCode :
3275352
Title :
Broadband antireflective structures for the THz spectral range fabricated on high resistive float zone silicon
Author :
Brückner, Claudia ; Käsebier, Thomas ; Pradarutti, Boris ; Riehemann, Stefan ; Notni, Gunther ; Kley, Ernst-Bernhard ; Tünnermann, Andreas
Author_Institution :
Fraunhofer Inst. for Appl. Opt. & Precision Eng., Jena
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
Antireflective structures for a spectral range from 0.1-1.2 THz are applied to the surface of high resistive float zone silicon by deep reactive ion etching. Binary hexagonal and rectangular structures yield an increase in the pulse maximum of the electric field strength of about 20 percent for one structured surface.
Keywords :
antireflection coatings; elemental semiconductors; silicon; sputter etching; surface structure; terahertz wave spectra; Si; THz spectra; broadband antireflective structures; deep reactive ion etching; electric field strength; frequency 0.1 THz to 1.2 THz; high resistive float zone silicon; Diffraction gratings; Etching; Frequency; Manufacturing; Optical surface waves; Polarization; Refractive index; Silicon; Time measurement; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665564
Filename :
4665564
Link To Document :
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