AlP/GaP quantum wells for implementing intersubband devices in the 30–60 μm wavelength region

Author

Goiran, M. ; Semtsiv, M.P. ; Masselink, W.T. ; Léotin, J.

Author_Institution

Lab. Nat. des Champs Magnetiques Pulses, Toulouse

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

A detailed study of inter-subband energy transitions in AlP quantum wells (QWs) based on valley-symmetry and effective-mass measurements using THz cyclotron resonance and quantum transport in AlP/GaP QWs is presented. We show that AlP/GaP QWs can serve as the basis for THz devices emitting in the 30-60 mum wavelength range that is inaccessible by other systems because of phonon band absorption.

Keywords

III-V semiconductors; aluminium compounds; cyclotron resonance; effective mass; gallium compounds; phonons; quantum cascade lasers; quantum well lasers; semiconductor quantum wells; terahertz wave devices; AlP-GaP; effective-mass measurements; electronic structure; intersubband devices; intersubband energy transitions; phonon band absorption; quantum cascade lasers; quantum transport; quantum wells; terahertz cyclotron resonance; wavelength 30 mum to 60 mum; Cyclotrons; Effective mass; Electrons; Filling; Gallium arsenide; Magnetic field measurement; Phonons; Quantum cascade lasers; Stationary state; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665598

Filename

4665598