Evaluation of a high power ARCP voltage source inverter with IGCTs

Author

Bernet, S. ; Teichmann, R. ; Weber, J. ; Steimer, K.

Author_Institution

ABB Corp. Res., Heidelberg, Germany

Volume

2

fYear

1999

fDate

1999

Firstpage

1063

Abstract

An evaluation and comparison of a two-level conventional voltage source inverter (VSI) and an auxiliary resonant commutated pole voltage source inverter (ARCPVSI) featuring IGCTs for a 3 MVA application is presented. Design issues of both topologies are addressed. The IGCT loss approximations are based on extensive measurements of the devices under hard and soft switching conditions. The results show that the ARCPVSI with IGCTs is a highly competitive alternative to conventional VSIs in this power range

Keywords

MOS-controlled thyristors; commutation; invertors; losses; resonant power convertors; switching circuits; 3 MVA; IGCT; IGCT loss approximations; auxiliary resonant commutated pole VSI; hard switching; high power ARCP voltage source inverter; integrated gate commutated thyristor; soft switching; topology design issues; two-level conventional voltage source inverter; Commutation; Costs; Insulated gate bipolar transistors; Power semiconductor switches; Protection; Pulse width modulation inverters; Resonance; Thyristors; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE

Conference_Location

Phoenix, AZ

ISSN

0197-2618

Print_ISBN

0-7803-5589-X

Type

conf

DOI

10.1109/IAS.1999.801636

Filename

801636