Title :
Evaluation of a high power ARCP voltage source inverter with IGCTs
Author :
Bernet, S. ; Teichmann, R. ; Weber, J. ; Steimer, K.
Author_Institution :
ABB Corp. Res., Heidelberg, Germany
Abstract :
An evaluation and comparison of a two-level conventional voltage source inverter (VSI) and an auxiliary resonant commutated pole voltage source inverter (ARCPVSI) featuring IGCTs for a 3 MVA application is presented. Design issues of both topologies are addressed. The IGCT loss approximations are based on extensive measurements of the devices under hard and soft switching conditions. The results show that the ARCPVSI with IGCTs is a highly competitive alternative to conventional VSIs in this power range
Keywords :
MOS-controlled thyristors; commutation; invertors; losses; resonant power convertors; switching circuits; 3 MVA; IGCT; IGCT loss approximations; auxiliary resonant commutated pole VSI; hard switching; high power ARCP voltage source inverter; integrated gate commutated thyristor; soft switching; topology design issues; two-level conventional voltage source inverter; Commutation; Costs; Insulated gate bipolar transistors; Power semiconductor switches; Protection; Pulse width modulation inverters; Resonance; Thyristors; Topology; Voltage;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.801636
