Title :
Input and reverse transfer capacitance measurement of MOS-gated power transistors under high current flow
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
The measurement principle of the input and reverse transfer capacitance is shown. Function, stability and operation of the measurement circuits is discussed. The on state capacitances of a power DMOS transistor were measured under high current conditions of up to 250 A. A strong nonlinear characteristic is observed.
Keywords :
capacitance measurement; power MOSFET; semiconductor device measurement; MOS-gated power transistors; high current conditions; high current flow; input capacitance measurement; measurement circuits operation; nonlinear characteristic; on state capacitances; power DMOS transistor; regulation circuit; reverse transfer capacitance measurement; stability; Capacitance measurement; Circuits; Current measurement; Electrical resistance measurement; Heat sinks; Power measurement; Power transistors; Q measurement; Time measurement; Voltage;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.801640
