CW generation up to 2 THz by ion-irradiated In0.53Ga0.47As photomixer driven at 1.55 μm wavelengths

Author

Mangeney, J. ; Crozat, P. ; Merigault, A. ; Blary, K. ; Lampin, J.F.

Author_Institution

IEF, Univ. Paris-Sud, Orsay

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

We report the generation of continuous terahertz waves from microwave frequencies up to 2 THz obtained by photomixing two optical waves at 1.55-mum wavelengths in an optimized ion-irradiated In_0.53Ga_0.47As interdigitated photomixers. Output powers greater than 40 nW at 0.5 THz and 10 nW at 1 THz have been achieved. The optimum excitation conditions regarding optical power and bias voltage are discussed.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; ion beam effects; photoconducting devices; submillimetre wave generation; submillimetre wave mixers; continuous terahertz wave generation; frequency 0.5 THz; frequency 1 THz; ion-irradiated photomixer; optical power; optical wave photomixing; photoconductive material; wavelength 1.55 mum; Electrons; Frequency; Optical materials; Optical pumping; Optical sensors; Photoconducting materials; Power generation; Power measurement; Ultrafast optics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665631

Filename

4665631