• DocumentCode
    3276970
  • Title

    RFICs packages electrical performance comparison of both ULTRA-CSP and Standard TSOP

  • Author

    Hsu, Terry ; Chiang, Kevin ; Wang, Yu-Po

  • Author_Institution
    Siliconware Precision Industries Co. Ltd., Taichung, Taiwan
  • fYear
    2002
  • fDate
    10-12 Dec. 2002
  • Firstpage
    25
  • Lastpage
    31
  • Abstract
    The requirement for low cost, small size and high density for high-speed system drives the design of packages to smaller package size. ULTRA CSP is an advanced technology to meet the above targets. ULTRA CSP is a wafer level package developed by FCT. Under high frequency operation, the parasitics associated with the package will significantly degrade the package performance. An unsuitable package may cause resonance, coupling, impedance mismatch and frequency dependent loss. So, providing accurate package parasitics is critical to the success of the system design. In this paper, the electrical model of ULTRA CSP has been established based on the S-parameter simulation. When compared with the TSOP package, ULTRA-CSP shows smaller parasitics in the equivalent model. This paper also compares the performance of the ULTRA-CSP and Standard TSOP from the view point of propagation delay, crosstalk noise, insertion loss, return loss and maximum allowable working frequency. Based on the analysis result, is provided the package layout guideline for designer reference.
  • Keywords
    S-parameters; chip scale packaging; crosstalk; delays; equivalent circuits; frequency-domain analysis; integrated circuit noise; integrated circuit packaging; losses; radiofrequency integrated circuits; time-domain analysis; RFIC packages; S-parameter simulation; Standard TSOP; ULTRA-CSP; crosstalk noise; electrical model; electrical performance comparison; high frequency operation; insertion loss; maximum allowable working frequency; package parasitics; propagation delay; return loss; wafer level package; wideband equivalent circuit model; Chip scale packaging; Costs; Degradation; Frequency; Impedance; Insertion loss; Propagation losses; Radiofrequency integrated circuits; Resonance; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference, 2002. 4th
  • Print_ISBN
    0-7803-7435-5
  • Type

    conf

  • DOI
    10.1109/EPTC.2002.1185591
  • Filename
    1185591