DocumentCode
3277028
Title
Equivalent circuit model of noise for a separate absorption and multiplication avalanche photodiode (SAM-APD)
Author
Soroosh, M. ; Moravvej-Farshi, M.K. ; Zarifkar, A.
Author_Institution
Dept. of Opt. Syst. & Technol., Iran Telecommun. Res. Center, Iran
fYear
2005
fDate
6-8 March 2005
Firstpage
182
Lastpage
186
Abstract
In this paper, we present a circuit model of noise for separate absorption, and multiplication avalanche photodiode (SAM-APD). Also a circuit model of SAM-APD is presented. It is based on the carrier rate equations in different region of device. As two examples, a GaAs and an InGaAs/InAlAs SAM-APD are simulated.
Keywords
avalanche photodiodes; equivalent circuits; light absorption; optical noise; InAlAs; InGaAs; SAM-APD; carrier rate equation; equivalent circuit noise model; separate absorption and multiplication avalanche photodiode; Absorption; Avalanche photodiodes; Charge carrier processes; Circuit noise; Equations; Equivalent circuits; Impact ionization; Optical noise; Optical receivers; Optical sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Optical Communications Networks, 2005. WOCN 2005. Second IFIP International Conference on
Print_ISBN
0-7803-9019-9
Type
conf
DOI
10.1109/WOCN.2005.1436015
Filename
1436015
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