DocumentCode :
3277103
Title :
Close-from model of shunt capacitance and inductance of microstrip step discontinuities
Author :
Singh, Himanshu ; Verma, A.K.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
Some results for the inductance and capacitance associated with a step discontinuity in a microstrip are available. We present a model on the based on K.C. Gupta proposal for inductance having a maximum deviation 5% and average deviation 3% for isinr =9.6 and compare the numerical calibration with de-embedding techniques used in the planar electromagnetic (EM) simulation (SONNET) for isinr = 2.3, 4.0, 15.1, 20.0 & 40.0. These techniques are used to eliminate the port discontinuities brought by the current/voltage exciting source. The closed form model for step shunt capacitance having a maximum deviation 10% and average deviation 4.66% for 2.3 les isin, les 40.0 against numerical results of the internal equation method. The models have average deviation 0.027 for the Cp and 0.015 for Ls against the results of Sonnet.
Keywords :
capacitance; inductance; microstrip discontinuities; SONNET; current-voltage exciting source; deembedding techniques; inductance; internal equation method; microstrip discontinuities; microstrip line; numerical analysis; planar electromagnetic simulation; shunt capacitance; Capacitance; Circuit simulation; Circuit testing; Curve fitting; Equations; Inductance; Logistics; Microstrip; Multidimensional systems; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665657
Filename :
4665657
Link To Document :
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