• DocumentCode
    3277158
  • Title

    High performance active temperature control of a device under test (DUT)

  • Author

    Tustaniwskyj, Jerry I. ; Babcock, James W.

  • Author_Institution
    Unisys Unigen Operations, San Diego, CA, USA
  • fYear
    2004
  • fDate
    9-11 Mar 2004
  • Firstpage
    81
  • Lastpage
    86
  • Abstract
    Semiconductor devices typically are tested a number of times during the manufacturing process. Temperature control of the devices under test (DUTs) is critical since the manufacturer needs to ensure the functionality and switching speed of a device over a specified temperature range. An additional challenge is posed in the burn-in portion of semiconductor test, where voltage acceleration dramatically increases device power dissipation. In this paper we describe an active thermal control system which is capable of controlling DUTs with very high power dissipation and has a fast dynamic response. Also described in this paper are a technique to control DUTs that do not have a temperature sensor and a method to determine the quality of the thermal interface between the test head and the DUT.
  • Keywords
    semiconductor device testing; temperature control; burn-in; device power dissipation; device under test; functionality; high performance active temperature control; manufacturing process; semiconductor devices; switching speed; voltage acceleration; Control systems; Manufacturing processes; Power dissipation; Power semiconductor switches; Semiconductor device manufacture; Semiconductor device testing; Semiconductor devices; Temperature control; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium, 2004. Twentieth Annual IEEE
  • ISSN
    1065-2221
  • Print_ISBN
    0-7803-8363-X
  • Type

    conf

  • DOI
    10.1109/STHERM.2004.1291305
  • Filename
    1320456