Title :
Low-loss porous silicon substrates for microwave and millimeter applications
Author :
Guo, F. ; Zhang, L. ; Sun, Z. ; Zhu, Z. ; Chu, J.
Author_Institution :
Sch. of Inf. Sci. & Technol., East China Normal Univ., Shanghai
Abstract :
This paper propose the utilization of a photolithographic process to elevate the metal lines position that relative to the wafer plane, in order to take advantage from the signal propagation practically on-the-air, gained an almost ideal TEM mode of propagation in CPW structure. S-parameter and coupling degree of CPW with porous Si (PS), SOI and high resistivity silicon (HRS), SOI substrates are compared.
Keywords :
coplanar waveguides; elemental semiconductors; photolithography; silicon; transmission electron microscopy; Si; TEM mode; high resistivity silicon; low-loss porous silicon substrates; microwave application; millimeter application; photolithographic process; signal propagation; wafer plane; CMOS technology; Conductivity; Coplanar waveguides; Coupling circuits; Frequency; Microwave technology; Millimeter wave technology; Polyimides; Semiconductor films; Silicon;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665669
