Theoretical analyses and numerical simulation about photomixing process in InGaAs with antenna structure for CW terahertz generation

Author

He, Jian ; Yuan, Yinghao ; Cao, Guixing ; Yao, Jianquan

Author_Institution

Wuhan Nat. Lab. for Photonics, Huazhong Univ. of Sci. & Technol., Wuhan

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

A new THz photomixer based on InGaAs and integrated with antenna structure is proposed. The photomixing process for terahertz generation has been discussed and simulated. The proposed scheme works at 1550 nm wavelength range. Thus many commercial devices for optical fiber communication system can be used to design the experimental scheme. Furthermore, as there is no additional antenna element, it is very helpful to solve the serious impedance mismatch question.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; submillimetre wave antennas; submillimetre wave mixers; terahertz wave generation; CW terahertz generation; InGaAs; THz photomixer; antenna structure; photomixing; terahertz generation; wavelength 1550 nm; Antenna theory; Frequency; Indium gallium arsenide; Laser excitation; Microstrip antennas; Numerical simulation; Optical materials; Photoconductivity; Pump lasers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665671

Filename

4665671