Terahertz photocurrents in heterostructures with one-dimensional lateral periodic potential

Author

Olbrich, P. ; Ravash, R. ; Feil, T. ; Danilov, S.D. ; Allerdings, J. ; Weiss, D. ; Ivchenko, E.L. ; Ganichev, S.D.

Author_Institution

Terahertz Center, Univ. of Regensburg, Regensburg

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

1

Abstract

We report on the observation of terahertz radiation induced photogalvanic currents in semiconductor quantum well structures with one-dimensional lateral periodic potential. The current response is well described by the phenomenological theory of the superposition of the linear and circular photogalvanic effects. Experimental data demonstrate that the inversion asymmetry of semiconductor heterostructures can be controllably varied by means of electron beam lithography. The inversion asymmetry in quantum well structures is of importance for rapidly growing field of spintronics providing an effective tool for the spin manipulation by an electric field.

Keywords

electron beam lithography; high-frequency effects; photoconductivity; photovoltaic effects; semiconductor heterojunctions; semiconductor quantum wells; 1D lateral periodic potential; electron beam lithography; inversion asymmetry; phenomenological theory; semiconductor heterostructures; semiconductor quantum well structures; spin manipulation; spintronics; terahertz photocurrents; terahertz radiation induced photogalvanic currents; Crystallography; Electron beams; Extraterrestrial measurements; Gratings; Lithography; Optical polarization; Optical pulses; Photoconductivity; Photovoltaic effects; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665696

Filename

4665696