• DocumentCode
    3278295
  • Title

    Room temperature terahertz detection based on plasma resonance of electrons in an Antenna-Coupled GaAs MESFET

  • Author

    Kim, Sangwoo ; Zimmerman, Jeramy D. ; Focardi, Paolo ; Wu, Dong Ho ; Gossard, Arthur C. ; Sherwin, Mark S.

  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Plasma resonance of electrons is observed in an antenna-coupled metal-semiconductor-field-effect-transistor (MESFET) by sweeping bias voltages. This resonant absorption is exploited to realize a room temperature terahertz detector with a measured noise equivalent power (NEP) ~ 5times10-8 W/Hzfrac12.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device noise; slot antennas; submillimetre wave detectors; GaAs; MESFET; NEP; antenna-coupled metal-semiconductor-field-effect-transistor; noise equivalent power; plasma resonance; resonant absorption; room temperature terahertz detection; temperature 293 K to 298 K; twin-slot antennas; Absorption; Antenna measurements; Detectors; Electrons; Gallium arsenide; MESFETs; Plasma measurements; Plasma temperature; Resonance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665711
  • Filename
    4665711
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3278295