Ordered incorporation of dopants in GaAs: a new route to overcome solubility limits

Author

Daweritz, L. ; Schutzendube, P. ; Reiche, M. ; Ploog, K.H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

1997

fDate

8-11 Sep 1997

Firstpage

87

Lastpage

90

Abstract

An analysis of atomic configurations during Si incorporation in GaAs by MBE has been performed using RHEED and reflectance difference spectroscopy (RDS). It provides a direct explanation for the different findings of the maximum sheet electron concentration in Si-delta doped GaAs reported in literature

Keywords

III-V semiconductors; electron density; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; reflectivity; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; solid solubility; GaAs:Si; MBE; RHEED; Si incorporation; Si-delta doped GaAs; atomic configurations; dopants ordered incorporation; maximum sheet electron concentration; reflectance difference spectroscopy; solubility limits; Anisotropic magnetoresistance; Atomic layer deposition; Doping; Electrons; Gallium arsenide; Performance analysis; Reflectivity; Sheet materials; Spectroscopy; Surface reconstruction;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711569

Filename

711569