Design and fabrication of quantum cascade laser structure based on III-Nitride semiconductors in the THz frequency range

Author

Terashima, W. ; Hirayama, H.

Author_Institution

Terahertz Quantum Device Lab., RIKEN, Sendai

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

We performed the design and fabrication of a resonant phonon-type quantum cascade structure using III-Nitride semiconductors for emission in the 5 to 12 terahertz frequency range. We could design a quantum cascade structure in which population inversion could be obtained by making calculations based on a self-consistent rate equation model. We also successfully fabricated the designed quantum cascade structure by radio-frequency molecular beam epitaxy.

Keywords

III-V semiconductors; aluminium compounds; gallium alloys; indium compounds; laser beams; molecular beam epitaxial growth; phonons; population inversion; quantum cascade lasers; semiconductor lasers; submillimetre wave lasers; wide band gap semiconductors; GaN-In_0.05Al_0.23Ga_0.72N; III-nitride semiconductors; THz frequency range; frequency 5 THz to 12 THz; population inversion; quantum cascade laser structure design; radio-frequency molecular beam epitaxy; resonant phonons; self-consistent rate equation model; Electrons; Frequency; III-V semiconductor materials; Optical design; Optical device fabrication; Optical scattering; Particle scattering; Phonons; Quantum cascade lasers; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665723

Filename

4665723