DocumentCode
3279001
Title
Analysis of Writing and Erasing Procedure of Flotox EEPROM Using the New Charge Balance Condition (CBC) Model
Author
Sugino, Satoshi ; Takakura, Nobuyuki ; Chen, Datong ; Dutton, Robert W.
Author_Institution
Matsushita Hectric Works, Ltd.
fYear
1992
fDate
31 May-1 Jun 1992
Firstpage
65
Lastpage
69
Keywords
Capacitance; Charge carrier processes; EPROM; Integral equations; Integrated circuit modeling; Laboratories; Numerical models; Poisson equations; Tunneling; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. NUPAD IV. Workshop on
Print_ISBN
0-7803-0516-7
Type
conf
DOI
10.1109/NUPAD.1992.673848
Filename
673848
Link To Document