CMOS circuit design for millimeter-wave applications

Author

Shigematsu, H. ; Hirose, T. ; Brewe, F. ; Rodwell, M.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2004

fDate

6-8 June 2004

Firstpage

123

Lastpage

126

Abstract

We have developed a 27 GHz tuned amplifier and 52.5 GHz voltage-controlled oscillator (VCO) using 0.18 μm CMOS. We used LRL calibration to extract accurate S-parameters for an intrinsic transistor with a microstrip line (MSL) structure consisting of metal1 and metal6. With this technique, we obtained a 17 dB gain and 14 dBm output power at 27 GHz for the tuned amplifier. We also obtained an oscillation frequency of 52.5 GHz with phase noise of -86 dBc/Hz at a 1 MHz offset. These results indicate that our proposed technique is suitable for CMOS millimeter wave design.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; S-parameters; integrated circuit design; microstrip circuits; millimetre wave oscillators; nonlinear network synthesis; phase noise; voltage-controlled oscillators; 17 dB; 27 GHz; 52.5 GHz; CMOS circuit design; S-parameters; VCO; calibration; intrinsic transistor; microstrip line structure; millimeter-wave applications; oscillation frequency; phase noise; tuned amplifier; voltage-controlled oscillator; Calibration; Circuit synthesis; Gain; Microstrip; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Power amplifiers; Scattering parameters; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320546

Filename

1320546