• DocumentCode
    3279158
  • Title

    Fatigue analysis of out-of-plane vibration polysilicon cantilever beam under high-cycle vibration loads

  • Author

    Chen, Long-long ; Song, Jing ; Huang, Qing-An ; Tang, Jie-ying

  • Author_Institution
    Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    884
  • Lastpage
    887
  • Abstract
    It has been proved that polysilicon film will fatigue under high cycle mechanical loads. However, there are still debates on its fatigue mechanism. In this paper, a different configuration is applied to the fatigue test to discover more phenomena. The test structure is a surface-micromachined microcantilever that vibrates out of plane under electrostatic excitation at its resonant frequency. A U-shaped notch is reaction-ion-etched at the root of the structure to induce stress concentration. Fatigue behavior is monitored by recording the shift of the resonant frequency using a laser Doppler vibrometer. Results show that the relative frequency shift reaches up to 1.3%. Compared with the reported data, the concentrated stress (about 1-10 MPa) is two orders of magnitude smaller, and the shift is two orders larger, indicating a very rapid fatigue procedure. This may be due to the greater roughness of the notch surface induced by the RIE process. The details of the mechanism are still under exploration.
  • Keywords
    cantilevers; fatigue; fatigue testing; micromachining; microsensors; sputter etching; vibration measurement; vibrations; U-shaped notch; electrostatic excitation; fatigue analysis; high cycle mechanical loads; laser Doppler vibrometer; out-of-plane vibration; polysilicon cantilever beam; polysilicon film; reaction-ion-etching; surface-micromachined microcantilever; Electrostatics; Fatigue; Laser excitation; Monitoring; Resonant frequency; Stress; Structural beams; Testing; Vibrations; Vibrometers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398144
  • Filename
    5398144