• DocumentCode
    3279177
  • Title

    Direct detection of long, periodic, ssDNA nanostructures assembled on CMOS transistor arrays

  • Author

    Lin, Ming-Yu ; Chang, Sheng-Ren ; Kao, Jiann-Shiun ; Chen, Hsin ; Yang, Yuh-Shyong

  • Author_Institution
    Nat. Appl. Res. Labs., Instrum. Technol. Res. Center, Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    334
  • Lastpage
    337
  • Abstract
    DNA is a wonderful material for the construction of nanostructures for a variety of applications. This paper describes a novel platform integrating single-stranded DNA (ssDNA) nanotemplates with CMOS-compatible, field-effect sensors. The field-effect sensor was based on oxide-semiconductor field-effect transistors (OSFETs), which were monolithically-integrated with signal-processing circuits to enhance the signal-to-noise ratio, and to detect the construction of ssDNA nanotemplate from complex DNA-protein interactions. The ssDNA nanotemplate on the transistor arrays was prepared by isothermal rolling circle amplification (RCA) through DNA aptamer-protein recognition and self-assembly strategy. The growth of the DNA nanostructure was monitored in situ, real-time and label-free on OSFET.
  • Keywords
    CMOS integrated circuits; DNA; aggregation; bioMEMS; biosensors; field effect transistors; molecular biophysics; monolithic integrated circuits; CMOS compatible field effect sensors; CMOS transistor arrays; DNA aptamer-protein recognition; DNA self assembly; DNA-protein interactions; OSFET; assembled ssDNA nanostructure; isothermal RCA; isothermal rolling circle amplification; long ssDNA nanostructure; monolithic integration; oxide semiconductor field effect transistors; periodic ssDNA nanostructure; signal processing circuits; single stranded DNA nanotemplates; ssDNA nanostructure detection; ssDNA nanotemplate construction detection; Assembly; Building materials; Circuits; DNA; FETs; Isothermal processes; Nanostructured materials; Nanostructures; Sensor phenomena and characterization; Signal to noise ratio;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398146
  • Filename
    5398146