Enhanced emission from THz antennas made of low-temperature-grown GaAs with annealed ohmic contacts

Author

Vieweg, N. ; Mikulics, M. ; Scheller, M. ; Ezdi, K. ; Wilk, R. ; Hübers, H.W. ; Koch, M.

Author_Institution

Inst. of High Freq. Technol., Tech. Univ. Braunschweig, Braunschweig

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

We present a systematic study of annealed ohmic contacts and their effect on the performance of THz antennas. Annealing of the ohmic contact causes a strong decrease in the contact resistance and an enhancement of the electric field distribution inside the antenna structure. This doubles the output power of the devices compared to conventional photoconductors with standard Schottky-type metallization fabricated on an identical material.

Keywords

III-V semiconductors; annealing; contact resistance; gallium arsenide; germanium alloys; gold alloys; nickel; ohmic contacts; semiconductor-metal boundaries; submillimetre wave antennas; GaAs-Ni-AuGe-Ni; Schottky-type metallization; THz antennas; annealed ohmic contacts; annealing; contact resistance; conventional photoconductors; electric field distribution; low-temperature-grown gallium arsenide; Annealing; Dipole antennas; Gallium arsenide; Gold; Metallization; Ohmic contacts; Photoconducting devices; Photoconducting materials; Stripline; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665767

Filename

4665767