A 5.2 GHz image rejection CMOS low noise amplifier for WLAN applications

Author

Nguyen, Trung-Kien ; Oh, Nam-Jin ; Choi, Hyung-Chul ; Ihm, Kuk-Ju ; Lee, Sang-Gug

Author_Institution

Inf. & Commun. Univ., Daejeon, South Korea

fYear

2004

fDate

6-8 June 2004

Firstpage

197

Lastpage

200

Abstract

This paper represents a low noise, high gain image rejection low noise amplifier (IR-LNA) used in the superheterodyne architecture. The proposed IR-LNA is implemented by integrating the low noise, high gain LNA with the proposed third order active notch filter, which is optimized for 5.25 GHz WLAN with IF frequency of 500 MHz applications. The measurement results show power gain of 20.5 dB, lower than 1.5 dB NF, and image rejection of 26 dB. Two-tone test results indicate -5 dBm and -8 dBm of IIP3 for the case of using and not using the notch filter, respectively. The proposed IR-LNA operates at supply voltage of 3 V, and dissipates 4 mA in 0.18 μm CMOS technology.

Keywords

CMOS analogue integrated circuits; active filters; microwave amplifiers; notch filters; 0.18 micron; 20.5 dB; 3 V; 4 mA; 5.25 GHz; 500 MHz; CMOS low noise amplifier; IR-LNA; WLAN; high gain low noise amplifier; image rejection low noise amplifier; superheterodyne architecture; third order active notch filter; Active filters; Active noise reduction; CMOS technology; Frequency; Gain measurement; Low-noise amplifiers; Noise measurement; Power measurement; Testing; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320569

Filename

1320569