90 nm CMOS MMIC amplifier

Author

Masud, M. Anowar ; Zirath, Herbert ; Ferndahl, Mattias ; Vickes, Hans-Olof

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2004

fDate

6-8 June 2004

Firstpage

201

Lastpage

204

Abstract

Small signal amplifiers at 20 and 40 GHz, based on a 90 nm CMOS process are demonstrated. A gain of 5.8 dB at 20 GHz for single stage has been obtained with a 1 dB compression point at 1 dBm. The corresponding figures for the 40 GHz amplifiers are 6 dB and -5.75 dBm. Noise figure for the 20 GHz amplifier is 6.4 dB. Both single gate access and double gate access transistors have been used in the design. DC power consumption of the 20 GHz single stage amplifier was found to be 10 mW whereas for the 40 GHz double stage amplifier it is approximately 19 mW. Total circuit area is 0.7×0.8 mm² for the single stage and 1×0.7 mm² for the 40 GHz double stage amplifier.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; 10 mW; 19 mW; 20 GHz; 40 GHz; 5.8 dB; 6 dB; 6.4 dB; 90 nm; CMOS MMIC amplifier; double gate access transistors; single gate access transistors; small signal amplifiers; CMOS process; CMOS technology; MMICs; Microwave technology; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Noise figure; Power amplifiers; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320570

Filename

1320570