Emission of terahertz-frequency electromagnetic radiation from indium phosphide under excitation by short pulses of near-infrared radiation

Author

Hargreaves, S. ; Lewis, R.A.

Author_Institution

Inst. for Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

We have examined the emission of terahertz-frequency radiation from indium phosphide (InP) under ultrashort pulses of near-infrared radiation. We have investigated nominally undoped, as well as p-doped and n-doped material. Compared to the emitter Indium Arsenide (InAs) we find that the total THz field from undoped InP is an order of magnitude less, but with the strength shifted to higher frequencies.

Keywords

III-V semiconductors; electro-optical effects; electromagnetic waves; high-speed optical techniques; indium compounds; microwave materials; semiconductor doping; terahertz wave generation; terahertz wave spectra; InP; electro-optic effect; indium phosphide; n-doped material; near-infrared radiation; p-doped material; terahertz-frequency electromagnetic radiation emission; ultrashort pulse excitation; EMP radiation effects; Electromagnetic radiation; III-V semiconductor materials; Indium phosphide; Optical materials; Photodiodes; Superconducting materials; Surface emitting lasers; Time domain analysis; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665770

Filename

4665770