• DocumentCode
    3279711
  • Title

    InN thin films deposition by rf magnetron sputtering

  • Author

    Braic, Mariana T. ; Zoita, Catalin N. ; Braic, Viorel T. ; Toacsan, Mariana I. ; Ioachim, Andrei T.

  • Author_Institution
    Nat. Inst. of Optoelectron., Bucharest
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    InN thin films were grown by reactive magnetron sputtering in a UHV system, using Ar and N2 as working gases. Electrical and optical investigations of the films were correlated with their structural and morphological characteristics in order to obtain good quality films for THz applications.
  • Keywords
    III-V semiconductors; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; Ar; InN; N2; UHV system; UV-visible spectrum; electrical properties; morphological characteristics; optical properties; rf magnetron sputtering; terahertz applications; thin film deposition; thin film growth; working gases; Argon; Electrons; Magnetic materials; Nitrogen; Optical films; Plasma measurements; Plasma temperature; Sputtering; Stimulated emission; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665782
  • Filename
    4665782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3279711