DocumentCode :
3279711
Title :
InN thin films deposition by rf magnetron sputtering
Author :
Braic, Mariana T. ; Zoita, Catalin N. ; Braic, Viorel T. ; Toacsan, Mariana I. ; Ioachim, Andrei T.
Author_Institution :
Nat. Inst. of Optoelectron., Bucharest
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
InN thin films were grown by reactive magnetron sputtering in a UHV system, using Ar and N2 as working gases. Electrical and optical investigations of the films were correlated with their structural and morphological characteristics in order to obtain good quality films for THz applications.
Keywords :
III-V semiconductors; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; Ar; InN; N2; UHV system; UV-visible spectrum; electrical properties; morphological characteristics; optical properties; rf magnetron sputtering; terahertz applications; thin film deposition; thin film growth; working gases; Argon; Electrons; Magnetic materials; Nitrogen; Optical films; Plasma measurements; Plasma temperature; Sputtering; Stimulated emission; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665782
Filename :
4665782
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3279711
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