A tunable and program-erasable capacitor on Si with excellent tuning memory

A novel tunable and program-erasable high-κ AlN MIS capacitor is demonstrated for the first time with excellent tuning memory, which is useful to tune the impedance mismatching and resonance frequency without always having a connected voltage bias circuit. A large C_max/C_min tunability of 12 is obtained due to the high-κ AlN dielectric with high 5 μF/μm² capacitance density. Good tuning memory is evidenced from the small V_th variation after program or erase at +4 V or -4 V for 10,000 s and the potential of years long extrapolated memory time.