DocumentCode
3279849
Title
Nano-switch for study of gold contact behavior
Author
Fruehling, Adam ; Xiao, Shijun ; Qi, Minghao ; Roy, Kaushik ; Peroulis, Dimitrios
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2009
fDate
25-28 Oct. 2009
Firstpage
248
Lastpage
251
Abstract
In this paper we present the fabrication and characterization of a new NEMS DC switch as a vehicle to characterize Au-to-Au contacts at nano-scale. The switch consists of a 1050-nm long, 200-nm wide and 50-nm thick cantilever gold beam. The measured on-state resistance values range from 83 ¿ to 640 ¿ and the actuation voltages from 4 V to 22 V. All measurements are conducted at a current of 1 ¿A and the obtained values are in good qualitative agreement with traditional elastic-plastic contact models. The calculated switching time is 55 ns. Characterization of contacts at nano-scale will be critical for the success of NEMS devices used in ultra low-power sensors. To this end, we examine the impact of such a switch as a leakage control mechanism.
Keywords
gold; nanocontacts; nanoelectromechanical devices; switches; Au-Au; NEMS DC switch; actuation voltages; cantilever gold beam; current 1 muA; elastic-plastic contact models; gold contact behavior; leakage control mechanism; nanoswitch; resistance 83 ohm to 640 ohm; switching time; time 55 ns; ultra low-power sensors; voltage 4 V to 22 V; Contact resistance; Current measurement; Electrical resistance measurement; Fabrication; Gold; Nanoelectromechanical systems; Structural beams; Switches; Vehicles; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2009 IEEE
Conference_Location
Christchurch
ISSN
1930-0395
Print_ISBN
978-1-4244-4548-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2009.5398176
Filename
5398176
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