Title :
Analysis of microwave noise sources in 150 GHz SiGe HBTs
Author :
Sakalas, P. ; Schroter, M. ; Scholz, R.F. ; Jiang, H. ; Racanelli, M.
Author_Institution :
CEDIC, Technische Univ. Dresden, Germany
Abstract :
Bias dependent microwave noise characteristics of 150 GHz SiGe HBTs were measured in the 2-26 GHz frequency range. The characteristics are compared with the compact bipolar transistor model HICUM. For noise source analysis and decomposition, a detailed small-signal model with corresponding parameters is employed which is based on HICUM. In particular, the influence of the various noise sources and mechanisms on the minimum noise figure is investigated. Correlation between base and collector current shot noise in SiGe is found to reduce NFmin in the current density and frequency range of investigation.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; shot noise; 150 GHz; 2 to 26 GHz; HBT microwave noise sources; SiGe; base current shot noise; bias dependent microwave noise characteristics; collector current shot noise; compact bipolar transistor model; current density; frequency dependent high-frequency noise; minimum noise figure; noise mechanisms; noise source analysis; noise source decomposition; Circuit noise; Current density; Delay effects; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave technology; Noise figure; Semiconductor device noise; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320600
