• DocumentCode
    3280111
  • Title

    The electromigration short — Length effect and its impact on circuit reliability

  • Author

    Oates, Anthony S.

  • Author_Institution
    Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    13-15 June 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The short-length effect, whereby electromigration is eliminated due a mechanical stress-gradient induced backflow has a profound impact on the characteristics of electromigration failure. Here we review our recent studies of electromigration failure at short lengths in Cu/low-k interconnects. We show that voiding failures can occur at current densities below the critical value. We develop a model that accurately predicts failure distributions as a function of stress variables, conductor geometry, and presence of passive reservoirs. We also discuss the scaling of electromigration at short - lengths, and show that failure times decrease even more rapidly than long-lengths with technology scaling.
  • Keywords
    circuit reliability; copper; critical current density (superconductivity); electromigration; Cu; circuit reliability; conductor geometry; critical value; current densities; electromigration failure; failure distributions; low k interconnects; mechanical stress gradient induced backflow; passive reservoirs; short lengths; stress variables; voiding failures; Conductors; Current density; Electromigration; Geometry; Monte Carlo methods; Reservoirs; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2013 IEEE International
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-0438-9
  • Type

    conf

  • DOI
    10.1109/IITC.2013.6615553
  • Filename
    6615553