AC and pulsed-DC stress electromigration failure mechanisms in Cu interconnects

Author

Lin, M.H. ; Oates, Anthony S.

Author_Institution

Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

The effects of AC and pulsed-DC (PDC) waveforms on electromigration failure distributions in Cu / low-k interconnects are examined. No failures are observed with a 1MHz pure AC stress, consistent with average current density controlled kinetics and complete recovery of damage during current reversal. Failure distributions with PDC stress are consistent with a degradation process that is determined by average current density and void growth kinetics.

Keywords

copper; current density; electromigration; failure analysis; integrated circuit interconnections; low-k dielectric thin films; stress effects; AC waveforms; Cu; Cu-low-k interconnects; PDC stress; PDC waveforms; average current density controlled kinetics; current reversal; degradation process; electromigration failure distributions; frequency 1 MHz; pulsed-DC waveforms; pure AC stress; void growth kinetics; Current density; Electromigration; Integrated circuit interconnections; Reliability; Resistance; Stress; AC Elecromigration; Copper; low-k; pulse DC;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615556

Filename

6615556