DocumentCode
3280189
Title
Experimental analysis of mechanical stresses and material properties in multi-layer interconnect systems by fibDAC
Author
Vogel, D. ; Auerswald, E. ; Michel, Bruno ; Rzepka, S.
Author_Institution
Micro Mater. Center Technol., Fraunhofer ENAS, Chemnitz, Germany
fYear
2013
fDate
13-15 June 2013
Firstpage
1
Lastpage
3
Abstract
The paper presents a new stress measurement method on base of stress relief caused by local material removal with ion milling in FIB equipment. Stress relief deformations extracted from SEM micrographs by means of digital image correlation allow the determination of stresses, as well as to estimate Young´s modulus on the position of ion milling. The paper gives an introduction into the method. The feasibility to extract local stresses in multilayer stacks, both in lateral direction and in depth, is discussed in more detail.
Keywords
Young´s modulus; deformation; focused ion beam technology; milling; multilayers; scanning electron microscopy; stress measurement; FIB equipment; SEM micrographs; Stress relief deformations; Young´s modulus; digital image correlation; fibDAC stress relief; ion milling; local material removal; material properties; mechanical stresses; multilayer interconnect systems; stress measurement; Films; Milling; Semiconductor device measurement; Silicon; Stress; Stress measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location
Kyoto
Print_ISBN
978-1-4799-0438-9
Type
conf
DOI
10.1109/IITC.2013.6615557
Filename
6615557
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