Quantitative analysis of the arsenic distribution in AsH3 treated InAsxP1-x/InP single quantum well by grazing incidence X-ray reflectivity and photoluminescence

InAs_xP_1-x/InP single quantum wells (SQWs) were prepared by AsH₃ treatment on InP surface using low pressure metalorganic chemical vapor deposition at 600°C. As distribution in the quantum well after the PH₃ purge was analyzed quantitatively by grazing incidence X-ray reflectivity and photoluminescence. Applying these two techniques simultaneously to a InAs_xP_1-x/InP SQW structure, the As distribution in the quantum well could be determined precisely and the total As amount incorporated at the interface and the As carryover length could be extracted. It was found that the total As amount decreased with PH ₃ purge time, however, the characteristic carryover length was constant at 6 monolayers irrespective of purge time. The As desorption rate constant during PH₃ purge was extracted assuming the first order reaction kinetics