Photonic bandgap crystal InGaAsP membrane microresonators

Author

Scherer, A. ; D´Urso, Brian ; Painter, O. ; Lee, R. ; Yariv, A.

Author_Institution

California Inst. of Technol., Pasadena, CA, USA

fYear

1998

fDate

11-15 May 1998

Firstpage

805

Lastpage

808

Abstract

We have microfabricated 2-D photonic bandgap structures in a thin slab of dielectric material to define reflectors and high-Q microresonators. By selectively omitting holes from the two-dimensional photonic crystal, laser cavities and optical resonator switches can be defined. We have designed this structure with a finite difference time domain (FDTD) approach, and demonstrate some promising designs in InGaAs/InGaAsP multiple quantum well material with emission wavelength of 1.55 microns

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; micromechanical resonators; photonic band gap; semiconductor quantum wells; 1.55 mum; InGaAs-InGaAsP; InGaAs/InGaAsP multiple quantum well; InGaAsP membrane microresonators; finite difference time domain; high-Q microresonators; laser cavities; microfabricated 2-D photonic bandgap structures; optical resonator switches; photonic bandgap crystal; reflectors; Biomembranes; Dielectric materials; Finite difference methods; Microcavities; Optical resonators; Optical switches; Photonic band gap; Photonic crystals; Quantum well lasers; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712789

Filename

712789