• DocumentCode
    3280306
  • Title

    Damage free cryogenic etching of ultra low-k materials

  • Author

    Baklanov, M.R. ; Liping Zhang ; Dussart, Remi ; de Marneffe, Jean-Francois

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2013
  • fDate
    13-15 June 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Cryogenic etching was applied to porous organosilicate (OSG) films. Plasma-induced damage was reduced due to the protective effect of etch by-products condensed in pores of low-k materials. Almost no carbon depletion was observed when the wafer temperature is below a certain critical level. Most of experiments were carried out with SF6 plasma. The addition of SiF4/O2 into the gas discharge allows a further reduction of plasma-induced damage by formation of a SiOxFy passivation layer.
  • Keywords
    cryogenics; low-k dielectric thin films; organic compounds; passivation; porous materials; silicon compounds; sputter etching; SF6; SiOxFy; damage free cryogenic etching; gas discharge; passivation layer; plasma-induced damage; porous organosilicate films; ultralow-k materials; wafer temperature; Annealing; Cryogenics; Etching; Films; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2013 IEEE International
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-0438-9
  • Type

    conf

  • DOI
    10.1109/IITC.2013.6615562
  • Filename
    6615562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3280306