Title :
Extremely non-porous ultra-low-k SiOCH (k=2.3) with sufficient modulus (>10 GPa), high Cu diffusion barrier and high tolerance for integration process formed by large-radius neutral-beam enhanced CVD
Author :
Kikuchi, Yutaka ; Wada, Atsushi ; Samukawa, Seiji
Author_Institution :
Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
Abstract :
We developed a practical large-radius neutral beam enhanced CVD with a dimethoxy tetramethy ldisiloxane (DMOTMDS) to form low-k SiOCH film on 8-inch Si wafers. We fabricated extremely non-porous film with an ultra-low k-value of 2.3 and a sufficient modulus (>10 GPa). This particular film did not show any damage from the oxygen plasma and acid or alkali solutions used in the fabrication process. Furthermore, the dense film almost completely resisted Cu diffusion into the film during thermal annealing.
Keywords :
annealing; chemical vapour deposition; copper; diffusion barriers; elastic moduli; low-k dielectric thin films; silicon compounds; Cu; Si; SiOCH; acid solutions; alkali solutions; diffusion barrier; dimethoxy tetramethy ldisiloxane; integration process; large-radius neutral-beam enhanced CVD; modulus; nonporous ultra-low-k SiOCH; oxygen plasma; size 8 inch; thermal annealing; tolerance; Annealing; Carbon; Dielectric constant; Films; Particle beams; Plasmas; Silicon;
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
DOI :
10.1109/IITC.2013.6615563
