DocumentCode :
3280342
Title :
Electron energies of InAs/InP quantum wires
Author :
Xiu-Zhi, Duan ; Guang-Xin, Wang ; Bing-Ping, Gou ; De, Liu
Author_Institution :
Coll. of Light Ind., Hebei United Univ., Tangshan, China
fYear :
2011
fDate :
15-17 April 2011
Firstpage :
4171
Lastpage :
4174
Abstract :
The electron properties of rectangular and elliptical quantum wires (QWRs) are investigated in detail by using the perturbation theory and the diagonalization method. In cases of both the absence and presence of a magnetic field the electron states are given in the single band effective mass approximation. The calculations show that the electron energies in quantum wires are dramatically influenced by the shape of the wires. The quantum behaviors of the quantum wires studied are similar to that of other-shaped QWRs which were studied before.
Keywords :
III-V semiconductors; effective mass; indium compounds; perturbation theory; semiconductor quantum wires; InAs-InP; InAs/InP quantum wires; diagonalization method; electron energies; electron properties; electron states; elliptical quantum wires; magnetic field; perturbation theory; rectangular quantum wires; single band effective mass approximation; Excitons; Indium phosphide; Industries; Magnetic fields; Quantum mechanics; Wires; electron states; magnetic field; quantum wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
Type :
conf
DOI :
10.1109/ICEICE.2011.5777614
Filename :
5777614
Link To Document :
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