Electron energies of InAs/InP quantum wires

Author

Xiu-Zhi, Duan ; Guang-Xin, Wang ; Bing-Ping, Gou ; De, Liu

Author_Institution

Coll. of Light Ind., Hebei United Univ., Tangshan, China

fYear

2011

fDate

15-17 April 2011

Firstpage

4171

Lastpage

4174

Abstract

The electron properties of rectangular and elliptical quantum wires (QWRs) are investigated in detail by using the perturbation theory and the diagonalization method. In cases of both the absence and presence of a magnetic field the electron states are given in the single band effective mass approximation. The calculations show that the electron energies in quantum wires are dramatically influenced by the shape of the wires. The quantum behaviors of the quantum wires studied are similar to that of other-shaped QWRs which were studied before.

Keywords

III-V semiconductors; effective mass; indium compounds; perturbation theory; semiconductor quantum wires; InAs-InP; InAs/InP quantum wires; diagonalization method; electron energies; electron properties; electron states; elliptical quantum wires; magnetic field; perturbation theory; rectangular quantum wires; single band effective mass approximation; Excitons; Indium phosphide; Industries; Magnetic fields; Quantum mechanics; Wires; electron states; magnetic field; quantum wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Information and Control Engineering (ICEICE), 2011 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-8036-4

Type

conf

DOI

10.1109/ICEICE.2011.5777614

Filename

5777614