DocumentCode :
3280373
Title :
Low-voltage process-adaptive logic and memory arrays for ultralow-power sensor nodes
Author :
Roy, Kaushik ; Kulkarni, Jaydeep ; Hwang, Myeong
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
fYear :
2009
fDate :
25-28 Oct. 2009
Firstpage :
185
Lastpage :
188
Abstract :
We propose process variation tolerant circuit techniques for robust digital subthreshold logic and memory for ultralow power sensor nodes. Based on the concepts developed in this paper, we present an 8×8 process-tolerant FIR filter, working in both superthreshold and subthreshold regions featuring adaptive ß-ratio modulation and integrated level converters. Ultra-dynamic voltage scaling (UVDS) enables the filter operation at 85 mV consuming 40 nW. For memory applications, we propose Schmitt Trigger based SRAM bitcell exhibiting built-in process variation tolerance. Functional SRAM with the proposed memory bitcell is demonstrated at 160 mV in 0.13 ¿m CMOS technology.
Keywords :
CMOS digital integrated circuits; FIR filters; SRAM chips; logic arrays; low-power electronics; wireless sensor networks; CMOS technology; Schmitt trigger based SRAM bitcell; adaptive Ã\x9f-ratio modulation; digital subthreshold logic arrays; integrated level converters; low-voltage process-adaptive logic arrays; memory arrays; power 40 nW; process variation tolerant circuit techniques; process-tolerant FIR filter; size 0.13 mum; ultradynamic voltage scaling; ultralow power sensor nodes; voltage 160 mV; voltage 85 mV; wireless sensor nodes; CMOS logic circuits; CMOS technology; Dynamic voltage scaling; Finite impulse response filter; Logic arrays; Logic circuits; MOS devices; Robustness; Sensor arrays; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
ISSN :
1930-0395
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2009.5398200
Filename :
5398200
Link To Document :
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