Title :
Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications
Author :
Zhou, Changjian ; Peng, Pinggang ; Yang, Yi ; Ren, Tianling
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The structural and electrical characteristics of Metal-Pb(Zr0.53Ti0.47)O3 (PZT)-TiO2-Si structures with TiO2 insulating layer deposited by metal organic chemical vapor deposition (MOCVD) method were investigated. The dependence of the electrical performances such as memory window (MW) and leakage current density on the thickness of the insulator layer and electrode material was studied. Highly preferred <;110>; orientation PZT thin film was obtained on the well crystallized TiO2 insulator layer. For the Pt/PZT/TiO2 (190nm)/Si structure working in the charge injection mode, a memory window of 0.5V and 2.2V, and a leakage current density of 3.38×10-7A/cm2, 6.21×10-7A/cm2 were obtained under a sweeping voltage of 5V and 7V, respectively. The memory characteristics suggest the possibility for next generation nonvolatile memory applications.
Keywords :
MIS capacitors; MOCVD; elemental semiconductors; ferroelectric thin films; lead alloys; leakage currents; piezoelectric thin films; random-access storage; silicon; surface morphology; titanium compounds; zirconium compounds; MOCVD method; Pb(Zr0.53Ti0.47)O3-TiO2-Si; capacitor; charge injection model; electrical characteristics; electrode material; insulating layer; leakage current density; memory window; metal organic chemical vapor deposition; nonvolatile memory applications; structural characteristics; voltage 0.5 V; voltage 2.2 V; voltage 5 V; voltage 7 V; Capacitance-voltage characteristics; Capacitors; Electrodes; Insulators; Leakage current; Nonvolatile memory; Silicon; FeRAM; MFIS; PZT; TiO2; charge injection;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017313
