Title :
Compact modeling and optimization of fine-pitch interconnects for silicon interposers
Author :
Kumar, Vipin ; Li Zheng ; Bakir, Muhannad ; Naeemi, Azad
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper presents the first optimization methodology for silicon interposer interconnect technology. The dimensions of these fine-pitch interconnects are roughly a few microns, because of which they can neither be treated as on-chip RC interconnects, nor as conventional off-chip interconnects. 3D extraction tools can provide an accurate estimate of the circuit parameters, but they prove to be very slow and tedious for design space exploration and optimization. Thus, the novel analytical models developed here for the frequency dependent resistance of fine-pitch interconnects are essential to efficiently optimize these interconnects. The error in the model is shown to be less than 15% for interconnect dimensions and frequency range of interest. The analytical models developed are then used to optimize the data-rate and cross-sectional dimensions to maximize the bandwidth-density and minimize the energy-per-bit, simultaneously.
Keywords :
elemental semiconductors; fine-pitch technology; integrated circuit interconnections; integrated circuit modelling; optimisation; silicon; 3D extraction tools; Si; analytical models; bandwidth-density; compact modeling; cross-sectional dimensions; data-rate dimensions; fine-pitch interconnects; frequency dependent resistance; on-chip RC interconnects; optimization; silicon interposers; Analytical models; Bandwidth; Integrated circuit interconnections; Measurement; Optimization; Resistance; Silicon; Silicon interposer; analytical modeling; fine-pitch interconnects; optimization;
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
DOI :
10.1109/IITC.2013.6615571