Low temperature bonding of Sn/In-Cu interconnects for three-dimensional integration applications

Author

Ruoh-Ning Tzeng ; Yan-Pin Huang ; Yu-San Chien ; Ching-Te Chuang ; Wei Hwang ; Jin-Chern Chiou ; Ming-Shaw Shy ; Teu-Hua Lin ; Kou-Hua Chen ; Chi-Tsung Chiu ; Ho-Ming Tong ; Kuan-Neng Chen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

A low temperature bonding technology of Sn/In composite solder bonded to Cu interconnect is proposed and investigated. The intermetallic compounds formed in the bonded interconnects can survive well in the following process. The Sn/In-Cu interconnects bonded at low temperature all exhibit excellent electrical performance and high resistance to multiple current stressing, showing a great potential in 3D applications.

Keywords

copper alloys; indium alloys; integrated circuit bonding; integrated circuit interconnections; solders; tin alloys; In-Cu; In-Cu interconnects; Sn; Sn interconnects; composite solder; excellent electrical performance; intermetallic compounds; low temperature bonding technology; multiple current stressing; three-dimensional integration; Atomic layer deposition; Bonding; Diffraction; Reliability; Temperature; Temperature measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615572

Filename

6615572