A high-efficiency SiGe BiCMOS WCDMA power amplifier with dynamic current biasing for improved average efficiency

Author

Deng, Junxiong ; Gudem, Prasad ; Larson, Lawrence E. ; Asbeck, Peter M.

Author_Institution

Electr. & Comput. Dept., California Univ., San Diego, La Jolla, CA, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

361

Lastpage

364

Abstract

This paper demonstrates a WCDMA single-stage power amplifier, fabricated in a 0.25 μm SiGe BiCMOS process. With dynamic biasing of the collector current, the average power efficiency is improved by more than a factor of two compared to a typical class AB power amplifier. The power amplifier satisfies the 3GPP class-III WCDMA adjacent channel power ratio (ACPR) specifications (ACPR_5M= -33 dBc and ACPR_10M = -58.8 dBc) with 23.9 dBm average channel output power. The measured output power at the 1 dB compression point is 25.9 dBm.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; code division multiple access; semiconductor materials; 0.25 micron; ACPR specifications; BiCMOS power amplifier; SiGe; adjacent channel power ratio; average power efficiency improvement; dynamic collector current biasing; high-efficiency WCDMA power amplifier; single-stage power amplifier; BiCMOS integrated circuits; Current density; Germanium silicon alloys; High power amplifiers; Impedance; Multiaccess communication; Power amplifiers; Power generation; Silicon germanium; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320622

Filename

1320622