Title :
Fabrication and characterization of SiC thin films
Author :
Liu, Lei ; Tang, Wei ; Zheng, Bai-xiang ; Zhang, Hai-Xia
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
Abstract :
Silicon carbide (SiC) is a material with excellent properties for micro systems applications. In this paper, three chemical vapor deposition methods, low pressure chemical vapor deposition (LPCVD), plasma enhance chemical vapor deposition (PECVD) at two different temperatures have been utilized to fabricate the silicon carbide thin films. The roughness, the crystal structure, the Young modulus, the hardness and the intrinsic stress of the silicon carbide films were studied in order to obtain the discriminating applications for MEMS fabrication.
Keywords :
Young´s modulus; hardness; micromechanical devices; plasma CVD; semiconductor thin films; MEMS fabrication; SiC; SiC thin film; Young modulus; crystal structure; hardness; intrinsic stress; low pressure chemical vapor deposition; microsystem application; plasma enhance chemical vapor deposition; roughness; silicon carbide thin film; Fabrication; Films; Micromechanical devices; Silicon carbide; Stress; Temperature; Young´s modulus; LPCVD; MEMS; PECVD; SiC;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017316
