Fabrication and characterization of SiC thin films

Author

Liu, Lei ; Tang, Wei ; Zheng, Bai-xiang ; Zhang, Hai-Xia

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China

fYear

2011

fDate

20-23 Feb. 2011

Firstpage

146

Lastpage

149

Abstract

Silicon carbide (SiC) is a material with excellent properties for micro systems applications. In this paper, three chemical vapor deposition methods, low pressure chemical vapor deposition (LPCVD), plasma enhance chemical vapor deposition (PECVD) at two different temperatures have been utilized to fabricate the silicon carbide thin films. The roughness, the crystal structure, the Young modulus, the hardness and the intrinsic stress of the silicon carbide films were studied in order to obtain the discriminating applications for MEMS fabrication.

Keywords

Young´s modulus; hardness; micromechanical devices; plasma CVD; semiconductor thin films; MEMS fabrication; SiC; SiC thin film; Young modulus; crystal structure; hardness; intrinsic stress; low pressure chemical vapor deposition; microsystem application; plasma enhance chemical vapor deposition; roughness; silicon carbide thin film; Fabrication; Films; Micromechanical devices; Silicon carbide; Stress; Temperature; Young´s modulus; LPCVD; MEMS; PECVD; SiC;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

Print_ISBN

978-1-61284-775-7

Type

conf

DOI

10.1109/NEMS.2011.6017316

Filename

6017316