Title :
A 45% PAE /18mA quiescent current CDMA PAM with a dynamic bias control circuit [power amplifier module]
Author :
Kim, Young-woong ; Han, Ki-Chon ; Hong, Seok-Yong ; Shin, Jin-ho
Author_Institution :
Future Commun. IC Inc., Kyunggi-Do, South Korea
Abstract :
Based on an analog-gain control bias circuit (AGBC), a dynamic and fixed bias-controlled InGaP/GaAs HBT MMIC power amplifier module (PAM) is designed for code-division multiple-access (CDMA) and advanced mobile-phone service (AMPS) handset applications. The proposed AGBC effectively improves the power-added efficiency (PAE) of a power amplifier (PA) over a wide range of output power while satisfying the CDMA/AMPS linearity requirements. The PA gain slope with respect to AGBC mode-control voltage is about 12 dB/V. The measured average current of this AGBC PA is reduced by 64% compared to a standard PA. The AGBC PA exhibits a 28 dB power gain, a 45% PAE, and a -49 dBc adjacent channel power ratio (ACPR) at 28 dBm output power with a fixed mode-control voltage.
Keywords :
MMIC power amplifiers; automatic gain control; bipolar MMIC; code division multiple access; mobile radio; modules; 18 mA; 45 percent; ACPR; AGBC; AMPS handset applications; CDMA PAM; CDMA linearity requirements; HBT MMIC power amplifier; InGaP-GaAs; PAE; adjacent channel power ratio; advanced mobile-phone service; analog-gain control bias circuit; code-division multiple-access; dynamic bias control circuit; fixed bias-controlled power amplifier; power amplifier module; power-added efficiency; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Linearity; MMICs; Multiaccess communication; Power amplifiers; Power generation; Telephone sets; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320623