• DocumentCode
    3280647
  • Title

    Electrons at Schottky barrier in presence of strong coherent THz radiation

  • Author

    Avanesyan, Gagik T. ; Petrosyan, Stepan G. ; Nikoghosyan, Anahit S. ; Roeser, Hans-Peter

  • Author_Institution
    Russian-Armenian State Univ., Yerevan
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Schottky barrier diodes are widely used as mixers in THz frequency range, due to their low-noise characteristics. However, the understanding of some phenomena behind their operation is still unsatisfactory. In particular, the scaling behavior of optimal current with frequency, combined with distinct manifestations of quantum effects, which had been observed in a series of experiments, still leave a list of unanswered questions. A discussion of the latter questions, along with possible approaches to explain the experimental studies mentioned is presented, and, in particular, the possible role of the energy relaxation effects that are relevant to the phenomena under consideration is discussed.
  • Keywords
    III-V semiconductors; Schottky diodes; gallium arsenide; semiconductor device noise; submillimetre wave diodes; GaAs; Schottky barrier diodes; THz radiation; energy relaxation effects; low-noise characteristics; scaling behavior; Acoustical engineering; Electromagnetic scattering; Electrons; Frequency; Low-frequency noise; Particle scattering; Schottky barriers; Schottky diodes; Signal to noise ratio; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665831
  • Filename
    4665831