DocumentCode
3280647
Title
Electrons at Schottky barrier in presence of strong coherent THz radiation
Author
Avanesyan, Gagik T. ; Petrosyan, Stepan G. ; Nikoghosyan, Anahit S. ; Roeser, Hans-Peter
Author_Institution
Russian-Armenian State Univ., Yerevan
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
3
Abstract
Schottky barrier diodes are widely used as mixers in THz frequency range, due to their low-noise characteristics. However, the understanding of some phenomena behind their operation is still unsatisfactory. In particular, the scaling behavior of optimal current with frequency, combined with distinct manifestations of quantum effects, which had been observed in a series of experiments, still leave a list of unanswered questions. A discussion of the latter questions, along with possible approaches to explain the experimental studies mentioned is presented, and, in particular, the possible role of the energy relaxation effects that are relevant to the phenomena under consideration is discussed.
Keywords
III-V semiconductors; Schottky diodes; gallium arsenide; semiconductor device noise; submillimetre wave diodes; GaAs; Schottky barrier diodes; THz radiation; energy relaxation effects; low-noise characteristics; scaling behavior; Acoustical engineering; Electromagnetic scattering; Electrons; Frequency; Low-frequency noise; Particle scattering; Schottky barriers; Schottky diodes; Signal to noise ratio; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665831
Filename
4665831
Link To Document