Title :
Electrical properties of multilayer graphene interconnects prepared by chemical vapor deposition
Author :
Katagiri, Masayuki ; Miyazaki, H. ; Yamazaki, Yasuyuki ; Li Zhang ; Matsumoto, Tad ; Wada, Masaki ; Kajita, Akihiro ; Sakai, Tadashi
Author_Institution :
Low-power Electron. Assoc. & Project (LEAP), Kawasaki, Japan
Abstract :
We fabricate multilayer graphene interconnects with 100-nm-class line widths. Multilayer graphene is grown on a Ni catalyst layer using remote plasma-enhanced chemical vapor deposition (CVD) at a low temperature of 600°C and transferred onto a SiO2/Si substrate after exfoliation from the Ni layer. The sheet resistance of the CVD graphene interconnects is as low as 500 Ω sq. The temperature dependence of resistance reveals that the CVD graphene exhibits half-metallic transport properties.
Keywords :
catalysts; graphene; nickel; plasma CVD; silicon compounds; Ni; SiO2-Si; catalyst layer; electrical properties; half metallic transport properties; multilayer graphene interconnects; remote plasma enhanced chemical vapor deposition; sheet resistance; size 100 nm; temperature 600 degC; temperature dependence; Graphene; Nickel; Nonhomogeneous media; Plasma temperature; Resistance; Silicon; Substrates;
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
DOI :
10.1109/IITC.2013.6615580
