Title :
Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)
Author :
Kawanabe, Takashi ; Kawabata, Akio ; Murakami, Toshiyuki ; Nihei, Mizuhisa ; Awano, Yuji
Author_Institution :
Keio Univ., Yokohama, Japan
Abstract :
We report numerical simulations of heat dissipation properties of nano-carbon through silicon via (TSV), thermal interface material (TIM), and chip package towards a high heat dissipation LSI 3-D packaging. By using vertically aligned multi-walled CNTs (MWNTs) as both TSV and TIM materials and graphite as chip package, a boundary temperature just under a heat source decreased 40.8K in total, comparing to that using conventional materials. This result suggests superior heat dissipation properties of nano-carbon 3-D packaging.
Keywords :
carbon nanotubes; cooling; graphite; integrated circuit packaging; large scale integration; numerical analysis; three-dimensional integrated circuits; C; CNT-TIM; CNT-TSV; LSI 3D packaging; MWNT; carbon nanotube through silicon via; chip packaging; graphite; heat source; high heat dissipation technology; nanocarbon 3D packaging; nanocarbon through silicon via property; numerical simulation; temperature 40.8 K; thermal interface material; vertically aligned multiwalled CNT; Heating; Packaging; Silicon; Solid modeling; Substrates; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
DOI :
10.1109/IITC.2013.6615581